The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2017

Filed:

Mar. 13, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Katsuyuki Naito, Tokyo, JP;

Yoshihiro Akasaka, Kanagawa, JP;

Tianyi Yang, Kanagawa, JP;

Norihiro Yoshinaga, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/02 (2006.01); H01B 1/24 (2006.01); B82Y 30/00 (2011.01); H01B 1/22 (2006.01); H01B 1/20 (2006.01); C23F 1/18 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); G06F 3/041 (2006.01); H01B 1/04 (2006.01); H01L 51/44 (2006.01); H01L 31/0224 (2006.01); H01L 51/52 (2006.01); H01L 29/16 (2006.01); H01L 29/41 (2006.01); C23F 1/00 (2006.01); C23F 1/08 (2006.01); H01L 51/00 (2006.01); H01L 31/028 (2006.01);
U.S. Cl.
CPC ...
H01B 1/02 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C23F 1/00 (2013.01); C23F 1/08 (2013.01); C23F 1/18 (2013.01); G06F 3/041 (2013.01); H01B 1/04 (2013.01); H01B 1/20 (2013.01); H01B 1/22 (2013.01); H01B 1/24 (2013.01); H01L 29/1606 (2013.01); H01L 29/413 (2013.01); H01L 31/028 (2013.01); H01L 31/022466 (2013.01); H01L 51/003 (2013.01); H01L 51/0021 (2013.01); H01L 51/442 (2013.01); H01L 51/5215 (2013.01); H01L 51/5234 (2013.01); G06F 2203/04103 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11); Y10T 428/24331 (2015.01);
Abstract

According to one embodiment, a method of manufacturing a transparent conductor is provided. In the method, a silver nanowire layer including a plurality of silver nanowires and having openings is formed on a graphene film supported by a copper support. Then, a transparent resin layer insoluble in a copper-etching solution is formed on the silver nanowire layer such that the transparent resin layer contacts the graphene film through the openings. The copper support is then brought into contact with the non-acidic copper-etching solution to remove the copper support, thereby exposing the graphene film.


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