The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2017

Filed:

Aug. 05, 2014
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Wan-Soo Choi, Gyeonggi-do, KR;

Taec-Jun Kim, Seoul, KR;

Sang-Wook Nam, Seoul, KR;

Jae-Hwa Lee, Gyeonggi-do, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/06 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 16/06 (2013.01); G11C 16/10 (2013.01); G11C 16/3418 (2013.01);
Abstract

A program method of a multi-bit memory device is provided. First page data is programmed in a first region of a memory cell array. The first page data is stored in a first buffer of a page buffer. Second page data is programmed in the first region of the memory cell array. The second page data is stored in a third buffer of the page buffer. Third page data is stored in the first region of the memory cell array. The second page data stored in the third buffer is transferred to a second buffer of the page buffer and the third page data is stored in the third buffer. The first to third page data stored in page buffer are programmed in a second region of the memory cell array.


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