The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Mar. 26, 2015
Panasonic Corporation, Osaka, JP;
Takuya Mino, Osaka, JP;
Takayoshi Takano, Saitama, JP;
Norimichi Noguchi, Osaka, JP;
Kenji Tsubaki, Osaka, JP;
Jun Sakai, Tokyo, JP;
Hideki Hirayama, Saitama, JP;
PANASONIC CORPORATION, Osaka, JP;
Abstract
An ultraviolet light emitting element includes a light emitting layer, a cap layer, an electron barrier layer. The light emitting layer has a multi-quantum well structure including barrier layers each including a first AlGaN layer and well layers each including a second AlGaN layer. The electron barrier layer includes at least one first p-type AlGaN layer and at least one second p-type AlGaN layer. The cap layer is located between the first p-type AlGaN layer and one of the well layers closest to the first p-type AlGaN layer. The cap layer is a third AlGaN layer having an Al composition ratio greater than an Al composition ratio of each of the well layers and less than an Al composition ratio of the first p-type AlGaN layer. The cap layer has a thickness of greater than or equal to 1 nm and less than or equal to 7 nm.