The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Sep. 28, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jae Hyeok Heo, Suwon-si, KR;
Jin Sub Lee, Suwon-si, KR;
Young Jin Choi, Seoul, KR;
Hyun Seong Kum, Hwaseong-si, KR;
Ji Hye Yeon, Cheongju-si, KR;
Dae Myung Chun, Hwaseong-si, KR;
Jung Sub Kim, Hwaseong-si, KR;
Han Kyu Seong, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.