The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2017

Filed:

Dec. 21, 2015
Applicant:

Solarcity Corporation, San Mateo, CA (US);

Inventors:

Zhigang Xie, San Jose, CA (US);

Anand J. Reddy, Castro Valley, CA (US);

Chunguang Xiao, Fremont, CA (US);

Jiunn Benjamin Heng, Los Altos Hills, CA (US);

Assignee:

Tesla, Inc., Palo Alto, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/07 (2012.01); H01L 31/0725 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0725 (2013.01); H01L 31/1804 (2013.01); H01L 31/1868 (2013.01); H01L 31/1884 (2013.01);
Abstract

One embodiment of the invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can form a sacrificial layer on a first side of a Si substrate; load the Si substrate into a chemical vapor deposition tool, with the sacrificial layer in contact with a wafer carrier; and form a first doped Si layer on a second side of the Si substrate. The system subsequently can remove the sacrificial layer; load the Si substrate into a chemical vapor deposition tool, with the first doped Si layer facing a wafer carrier; and form a second doped Si layer on the first side of the Si substrate.


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