The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2017

Filed:

Aug. 26, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Hui Zang, Guilderland, NY (US);

Manfred J Eller, Beacon, NY (US);

Min-Hwa Chi, San Jose, CA (US);

Jerome J. B. Ciavatti, Mechanicville, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/43 (2006.01); H01L 27/092 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/783 (2013.01); H01L 29/41775 (2013.01); H01L 29/4975 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract

One aspect of the disclosure relates to an integrated circuit structure. The integrated circuit structure may include: a gate structure between a pair of gate spacers within a dielectric layer and substantially surrounding a fin, wherein the gate structure is disposed adjacent to a channel region within the fin; and a source/drain contact extending within the dielectric layer to a source/drain region within a fin, the source/drain contact being separated from the gate structure by at least one gate spacer in the pair of gate spacers, wherein the channel region and the source/drain region provide electrical connection between the gate structure and the source/drain contact.


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