The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Mar. 12, 2014
Wisconsin Alumni Research Foundation, Madison, WI (US);
Mark A. Eriksson, Madison, WI (US);
John King Gamble, Madison, WI (US);
Daniel R. Ward, Madison, WI (US);
Susan Nan Coppersmith, Madison, WI (US);
Mark G. Friesen, Middleton, WI (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Abstract
A quantum semiconductor device is provided. The quantum semiconductor device includes a quantum heterostructure, a dielectric layer, and an electrode. The quantum heterostructure includes a quantum well layer that includes a first 2DEG region, a second 2DEG region, and a third 2DEG region. A first tunnel barrier exists between the first 2DEG region and the second 2DEG region. A second tunnel barrier exists between the second 2DEG region and the third 2DEG region. A third tunnel barrier exists either between the first 2DEG region and the third 2DEG region. The dielectric layer is formed on the quantum heterostructure. The electrode is formed on the dielectric layer directly above the first tunnel barrier.