The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Dec. 08, 2016
Renesas Electronics Corporation, Tokyo, JP;
Kouichi Arai, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Kawasaki-Shi, Kanagawa, JP;
Abstract
A method of manufacturing a semiconductor device that includes a junction field effect transistor, the junction field effect transistor including a semiconductor substrate of a first conductivity type, an epitaxial layer of the first conductivity type formed on the semiconductor substrate, a source region of the first conductivity type formed on a surface of the epitaxial layer, a channel region of the first conductivity type formed in a lower layer of the source region, a pair of trenches formed in the epitaxial layer so as to sandwich the source region therebetween, and a pair of gate regions of a second conductivity type, opposite to the first conductivity type, formed below a bottom of the pair of trenches.