The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
May. 01, 2015
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4941 (2013.01); H01L 29/45 (2013.01); H01L 29/456 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01); H01L 29/7804 (2013.01); H01L 29/7815 (2013.01); H01L 29/861 (2013.01); H01L 29/1608 (2013.01);
Abstract
A MOSFET cell of a semiconductor device includes a polysilicon gate electrode and an n-source region formed in an upper portion of an n-drift layer. An interlayer insulating film covers the gate electrode. An Al source electrode extends on the interlayer insulating film. An Al gate pad is connected to the gate electrode. A barrier metal layer that prevents diffusion of aluminum is interposed between the source electrode and the interlayer insulating film, and between the gate pad and the gate electrode.