The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2017

Filed:

Mar. 06, 2017
Applicant:

SK Hynix Inc., Icheon, KR;

Inventors:

Myoung-Sub Kim, Seongnam, KR;

Hyun-Jeong Kim, Yongin, KR;

Woo-Tae Lee, Seoul, KR;

Assignee:

SK HYNIX INC., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 23/528 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H01L 23/528 (2013.01); H01L 27/2409 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0078 (2013.01);
Abstract

A semiconductor memory includes first to third lines, the second line crossing the first and third lines between the first line and the third line, a first memory element overlapping an intersection region of the first and second lines between the first line and the second line, the first memory element including a first memory layer, a first electrode under the first memory layer, and a second electrode over the first memory layer, and a second memory element overlapping an intersection region of the second and third lines between the second line and the third line, the second memory element including a second memory layer, a third electrode under the second memory layer, and a fourth electrode over the second memory layer. An electrical resistance relation of the third and fourth electrodes is controlled according to an electrical resistance relation of electrical resistances of the first and second electrodes.


Find Patent Forward Citations

Loading…