The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Nov. 01, 2016
Applicant:
SK Hynix Inc., Icheon-Si, KR;
Inventors:
Assignee:
SK hynix Inc., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/24 (2006.01); H01L 27/11507 (2017.01); H01L 27/22 (2006.01); H01L 29/423 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2436 (2013.01); H01L 21/02164 (2013.01); H01L 21/26513 (2013.01); H01L 21/28088 (2013.01); H01L 21/28176 (2013.01); H01L 27/11507 (2013.01); H01L 27/228 (2013.01); H01L 29/4236 (2013.01); H01L 29/4966 (2013.01);
Abstract
A method for fabricating an electronic device that includes a metal-insulator-semiconductor (M-I-S) structure includes: providing a semiconductor layer; forming a primary insulation layer of a first thickness over the semiconductor layer; forming a reactive metal layer of a second thickness over the primary insulation layer, where the second thickness is greater than the first thickness; forming a primary capping layer of a third thickness over the reactive metal layer, where the third thickness is greater than the second thickness; and performing a thermal treatment.