The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Jun. 10, 2016
Applicant:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Inventor:
Masatoshi Kimura, Ibaraki, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14605 (2013.01); H01L 27/1463 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01); H01L 27/14687 (2013.01);
Abstract
In each pixel having a plurality of photodiodes for one microlens of a plurality of pixels arranged in a pixel array part, the photoelectrically converted electrons are prevented from moving between the photodiodes, thereby to improve the electron isolating characteristic, resulting in improved performances of a semiconductor device. In a well region immediately under between a first Ntype semiconductor region forming a first photodiode in a pixel and a second Ntype semiconductor region forming a second photodiode in the pixel, an isolation region higher in impurity density than the well region is formed.