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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9842836 B1

PDFFull Text
Date of Patent:
Dec. 12, 2017

Filed:

Apr. 13, 2016

Diode

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Kohei Makita, Kyoto, JP;

Teruhiro Koshiba, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Telly Green

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/08 (2006.01); H01L 29/872 (2006.01); H01L 29/866 (2006.01); H01L 29/36 (2006.01); H01L 29/47 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0814 (2013.01); H01L 29/36 (2013.01); H01L 29/866 (2013.01); H01L 29/872 (2013.01); H01L 29/0619 (2013.01); H01L 29/47 (2013.01);
Abstract

A diode according to the present invention includes a semiconductor layer of a first conductivity type having an impurity concentration of 1×10cmto 2.4×10cm, a Zener diode region of a second conductivity type formed selectively in the semiconductor layer and forming a pn junction with the semiconductor layer, a Schottky metal disposed on the semiconductor layer, forming a Schottky junction with the semiconductor layer, and having a work function of 3 eV to 6 eV, and a JBS (junction barrier Schottky) structure including a plurality of second conductivity type regions formed selectively in the Schottky junction region of the semiconductor layer.

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