The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2017

Filed:

Jan. 24, 2014
Applicant:

Sumco Corporation, Tokyo, JP;

Inventors:

Kei Matsumoto, Hiroshima, JP;

Kazutaka Eriguchi, Saga, JP;

Noritomo Mitsugi, Saga, JP;

Tsuyoshi Kubota, Saga, JP;

Assignee:

SUMCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01);
Abstract

An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor wafer that has been subjected to a heat treatment, which comprises obtaining analysis values by analyzing a plurality of analysis points on a surface of the semiconductor wafer by a first analysis method or a second analysis method, wherein in the first analysis method, analysis values employed in evaluation decrease as an amount of contamination by a metal element that is to be evaluated increases, and in the second analysis method, analysis values employed in evaluation increase as an amount of contamination by a metal element that is to be evaluated increases, and wherein determination of presence or absence of localized contamination by the metal element that is to be evaluated is made by evaluating the analysis values based on the normal value specified by a probability distribution function.


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