The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Apr. 03, 2015
Applicant:
Spts Technologies Limited, Newport, GB;
Inventors:
Jash Patel, Somerset, GB;
Janet Hopkins, Monmouthshire, GB;
Assignee:
SPTS Technologies Limited, Newport, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3065 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01J 37/321 (2013.01); H01J 37/32706 (2013.01); H01J 37/32715 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01L 22/12 (2013.01); H01L 22/26 (2013.01);
Abstract
A method is for etching a semiconductor substrate to reveal one or more features buried in the substrate. The method includes performing a first etch step using a plasma in which a bias power is applied to the substrate to produce an electrical bias, performing a second etch step without a bias power or with a bias power which is lower than the bias power applied during the first etch step, and alternately repeating the first and second etch steps.