The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2017

Filed:

Dec. 27, 2016
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Haruhiko Yoshida, Funabashi, JP;

Kazuya Ohira, Tokyo, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 21/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02683 (2013.01); H01L 31/02327 (2013.01);
Abstract

According to one embodiment, a semiconductor photo-receiving device includes a substrate, a light propagation layer and a semiconductor layer including a lowest layer and upper layers. The upper layers include an optical absorption layer. The light propagation layer includes a first light input layer, a first annular layer at a desired distance from the first light input layer, and a first optical waveguide connecting the first light input layer and annular layer. The lowest layer of the semiconductor layer includes a second light input layer, a second annular layer at a desired distance from the second light input layer, and a second optical waveguide connecting the second light input layer and annular layer.


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