The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Jul. 16, 2015
Boe Technology Group Co., Ltd., Beijing, CN;
Yanan Niu, Beijing, CN;
Chao Liu, Beijing, CN;
Zengsheng He, Beijing, CN;
Lei Chen, Beijing, CN;
Yujun Zhang, Beijing, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Abstract
A method of manufacturing a low temperature polycrystalline silicon thin film and a thin film transistor, a thin film transistor, a display panel and a display device are provided. The method includes: forming an amorphous silicon thin film () on a substrate (); forming a pattern of a silicon oxide thin film () covering the amorphous silicon thin film (), a thickness of the silicon oxide thin film () located at a preset region being larger than that of the silicon oxide thin film () located at other regions; and irradiating the silicon oxide thin film () by using excimer laser to allow the amorphous silicon thin film () forming an initial polycrystalline silicon thin film (), the initial polycrystalline silicon thin film () located at the preset region being a target low temperature polycrystalline silicon thin film (). The polycrystalline silicon thin film has more uniform crystal size.