The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Oct. 31, 2016
Ki Woong Kim, Hwaseong-si, KR;
Juhyun Kim, Hwaseong-si, KR;
Yong Sung Park, Suwon-si, KR;
Sechung OH, Yongin-si, KR;
Joonmyoung Lee, Anyang-si, KR;
Woo Chang Lim, Seongnam-si, KR;
Ki Woong Kim, Hwaseong-si, KR;
Juhyun Kim, Hwaseong-si, KR;
Yong Sung Park, Suwon-si, KR;
Sechung Oh, Yongin-si, KR;
Joonmyoung Lee, Anyang-si, KR;
Woo Chang Lim, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A magnetic memory device and a method of fabricating the same are provided. The method includes forming a first magnetic layer on a substrate, forming a tunnel barrier layer on the first magnetic layer, and forming a second magnetic layer on the tunnel barrier layer. The forming of the tunnel barrier layer includes forming a first metal oxide layer on the first magnetic layer, forming a first metal layer on the first metal oxide layer, forming a second metal oxide layer on the first metal layer, and performing a first thermal treatment process to oxidize at least a portion of the first metal layer.