The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Mar. 08, 2016
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Hideyuki Sugiyama, Kawasaki, JP;
Mizue Ishikawa, Yokohama, JP;
Tomoaki Inokuchi, Yokohama, JP;
Yoshiaki Saito, Kawasaki, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
A spin transistor memory according to an embodiment includes: a first semiconductor region, a second semiconductor region, and a third semiconductor region, each being of a first conductivity type and disposed in a semiconductor layer; a first gate disposed above the semiconductor layer between the first semiconductor region and the second semiconductor region; a second gate disposed above the semiconductor layer between the second semiconductor region and the third semiconductor region; and a first ferromagnetic layer, a second ferromagnetic layer, and a third ferromagnetic layer disposed on the first semiconductor region, the second semiconductor region, and the third semiconductor region respectively.