The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2017

Filed:

Mar. 29, 2014
Applicant:

Cypress Semiconductor Corporation, San Jose, CA (US);

Inventors:

Ravindra M Kapre, San Jose, CA (US);

Shahin Sharifzadeh, Menlo Park, CA (US);

Helmut Puchner, Santa Clara, CA (US);

Nayan Patel, Bangalore, IN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 7/02 (2006.01); G11C 11/417 (2006.01); H01L 27/092 (2006.01); H02H 9/02 (2006.01); G11C 11/412 (2006.01);
U.S. Cl.
CPC ...
G11C 7/02 (2013.01); G11C 5/14 (2013.01); G11C 11/417 (2013.01); G11C 11/4125 (2013.01); H01L 27/0921 (2013.01); H02H 9/025 (2013.01);
Abstract

A memory including current-limiting devices and methods of operating the same to prevent a spread of soft errors along rows in an array of memory cells in the memory are provided. In one embodiment, the method begins with providing a memory comprising an array of a plurality of memory cells arranged in rows and columns, wherein each of the columns is coupled to a supply voltage through one of a plurality of current-limiting devices, Next, each of the plurality of current-limiting devices are configured to limit current through each of the columns so that current through a memory cell in a row of the column due to a soft error rate event does not result in a lateral spread of soft errors to memory cells in the row in an adjacent column. Other embodiments are also provided.


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