The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2017

Filed:

Feb. 19, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Anurag Mittal, Saratoga Springs, NY (US);

Mahbub Rashed, Santa Clara, CA (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 23/00 (2006.01); H01L 27/00 (2006.01); H01L 27/12 (2006.01); H01L 27/02 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5072 (2013.01); G06F 17/5077 (2013.01); G06F 17/5081 (2013.01); H01L 23/528 (2013.01); H01L 27/0207 (2013.01); H01L 27/1203 (2013.01);
Abstract

At least one method, apparatus and system disclosed involves providing a design for manufacturing a semiconductor device. A first functional cell having a first width is placed on a circuit layout. A determination is made as to whether at least one transistor of the first functional cell is to be forward biased or reversed biased. A second functional cell having a second width is placed adjacent to the first functional cell on the circuit layout for providing a first biasing well within the total width of the first and second functional cells in response to determining that the at least one transistor is to be forward biased or reversed biased.


Find Patent Forward Citations

Loading…