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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9841617 B1

PDFFull Text
Date of Patent:
Dec. 12, 2017

Filed:

Sep. 22, 2014

Optical device including three-coupled quantum well structure

Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Yongchul Cho, Suwon-si, KR;

Yongtak Lee, Gwangju, KR;

Byunghoon Na, Suwon-si, KR;

Changyoung Park, Yongin-si, KR;

Gunwu Ju, Daegu, KR;

Yonghwa Park, Yongin-si, KR;

Assignees:

Gwangju Institute of Science and Technology, Gwangju, KR;

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Evelyn A Lester

Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 33/00 (2010.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01); H01L 29/40 (2006.01); G02F 1/03 (2006.01); G02F 1/017 (2006.01); H01L 31/0352 (2006.01); H01L 31/075 (2012.01); H01L 31/105 (2006.01); H01L 33/58 (2010.01); H01L 23/532 (2006.01); H01L 33/10 (2010.01); H01L 33/04 (2010.01); H01L 33/62 (2010.01); H01L 23/528 (2006.01); G02F 1/1335 (2006.01); H01L 33/46 (2010.01); H01L 33/60 (2010.01); H01L 33/42 (2010.01); H01L 33/50 (2010.01); B82Y 20/00 (2011.01); G02F 1/015 (2006.01);
U.S. Cl.
CPC ...
G02F 1/01725 (2013.01); H01L 31/035236 (2013.01); H01L 31/075 (2013.01); H01L 31/105 (2013.01); B82Y 20/00 (2013.01); G02F 1/133605 (2013.01); G02F 2001/0157 (2013.01); G02F 2001/0175 (2013.01); G02F 2001/01733 (2013.01); G02F 2001/01766 (2013.01); H01L 23/528 (2013.01); H01L 23/53223 (2013.01); H01L 31/00 (2013.01); H01L 33/04 (2013.01); H01L 33/10 (2013.01); H01L 33/42 (2013.01); H01L 33/46 (2013.01); H01L 33/502 (2013.01); H01L 33/58 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 2224/05124 (2013.01); H01L 2924/00 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/12042 (2013.01); Y02E 10/548 (2013.01); Y10S 977/755 (2013.01);
Abstract

An optical device includes an active layer that includes at least two outer barriers and at least one coupled quantum well that is inserted between the at least two outer barriers. Each coupled quantum well includes at least three quantum well layers and at least two coupling barriers that are respectively provided between the at least three quantum well layers. Thicknesses of two quantum well layers disposed at opposite end portions of the at least three quantum well layers are less than a thickness of the other quantum well layer disposed between the two quantum well layers disposed at the opposite end portions. A bandgap of the two quantum well layers disposed at the opposite end portions may be higher than a bandgap of the other quantum well layer disposed between the two quantum well layers.

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