The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Dec. 16, 2013
Telefonaktiebolaget Lm Ericsson (Publ), Stockholm, SE;
Mingquan Bao, Västra Frölunda, SE;
TELEFONAKTIEBOLAGET LM ERICSSON (PUBL), Stockholm, SE;
Abstract
A power detector comprising a first and a second bipolar junction/FET transistor. The first transistor is arranged as a common base/gate transistor with its base/gate being biased by a bias voltage and the second transistor is arranged as a common emitter/source transistor with its emitter/source being grounded. The power detector also comprises a diode or current source connected to ground from the emitter/source of the first transistor, in which power detector an input port is connected to the emitter of the first transistor and to the base/gate of the second transistor, and an output port is connected to the collectors/drains of the first and second transistor, said collectors/drains also being connected to a DC supply via a first resistor.