The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Jul. 14, 2016
Texas Instruments Incorporated, Dallas, TX (US);
Sudheer Prasad, Bangalore, IN;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A detection circuit includes a first transistor coupled to a gate of a high power transistor, a second transistor whose source is coupled to a drain of the first transistor, a first voltage divider coupled to a source of the first transistor, and a second voltage divider coupled to the source of the second transistor. The first transistor is configured to generate a first transistor output voltage representative of a gate voltage of the high power transistor shifted based on a first gate-to-source voltage of the first transistor. The second transistor is configured to generate a second gate-to-source voltage substantially equal to the first gate-to-source voltage. The first divider is configured to divide the first transistor output voltage by a first factor. The second divider is configured to divide the second gate-to-source voltage by a second factor correlated with the first factor.