The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Jan. 23, 2017
Applicant:
Playnitride Inc., Tainan, TW;
Inventors:
Yen-Lin Lai, Tainan, TW;
Jyun-De Wu, Tainan, TW;
Assignee:
PlayNitride Inc., Tainan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/30 (2006.01); H01S 5/20 (2006.01); H01L 33/06 (2010.01); H01S 5/10 (2006.01); H01L 33/04 (2010.01);
U.S. Cl.
CPC ...
H01S 5/3054 (2013.01); H01S 5/2018 (2013.01); H01S 5/2031 (2013.01); H01S 5/3095 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01S 5/1028 (2013.01);
Abstract
A semiconductor light-emitting device including a light-emitting layer, a first N-type waveguide layer and a plurality of semiconductor layers is provided. The light light-emitting layer has a first side and a second side opposite to the first side. The first N-type waveguide layer is disposed at the first side, and the semiconductor layers are disposed at the second side. The semiconductor layers include at least one P-type semiconductor layer and a plurality of N-type semiconductor layers, and a quantity of the N-type semiconductor layers is more than a quantity of the at least one P-type semiconductor layer.