The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

Apr. 10, 2013
Applicants:

Cnrs—centre National DE LA Recherche Scientifique, Paris, FR;

Universite DE Nantes, Nantes, FR;

Inventors:

Laurent Cario, Nantes, FR;

Etienne Janod, La Chapelle sur Erdre, FR;

Benoit Corraze, Carquefou, FR;

Marie-Paule Besland, Orvault, FR;

Vincent Guiot, Didcot, GB;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/142 (2013.01); G11C 13/0002 (2013.01); G11C 13/0007 (2013.01); G11C 13/0014 (2013.01); H01L 45/04 (2013.01); H01L 45/1253 (2013.01); H01L 45/14 (2013.01); H01L 45/141 (2013.01); H01L 45/143 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01);
Abstract

A material belonging to the family of centrosymmetric Mott insulators is used as an active material in a resistively switched memory for storing data. The material is placed between two electrical electrodes, by virtue of which an electric field of a preset value is applied in order to form, by way of an electron avalanche effect, an elementary information cell that has at least two logic states.


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