The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

Jan. 23, 2015
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventors:

Masahiko Onishi, Anan, JP;

Shun Kitahama, Tokushima, JP;

Assignee:

NICHIA CORPORATION, Anan-Shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/52 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 33/40 (2013.01); H01L 33/44 (2013.01); H01L 33/52 (2013.01); H01L 2933/0016 (2013.01);
Abstract

In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.


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