The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Dec. 18, 2015
Applicants:
Lg Innotek Co., Ltd., Seoul, KR;
Lg Electronics Inc., Seoul, KR;
Inventors:
Assignees:
LG INNOTEK CO., LTD., Seoul, KR;
LG ELECTRONICS INC., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 33/48 (2010.01); H01L 33/62 (2010.01); H01L 33/60 (2010.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/48 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 33/0079 (2013.01); H01L 33/22 (2013.01); H01L 33/44 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/73265 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0083 (2013.01); Y10S 438/977 (2013.01);
Abstract
A light emitting device including a support layer; a reflective electrode disposed on the support layer; an ohmic electrode disposed on the reflective electrode, the ohmic electrode including a transparent electrode; and a semiconductor structure disposed on the ohmic electrode, the semiconductor structure including a p-type semiconductor layer disposed on the ohmic electrode; a light emitting layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer disposed on the light emitting layer. Further, the transparent electrode has a thickness in the range of 40 nm to 90 nm.