The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

Sep. 23, 2016
Applicant:

Los Alamos National Security, Llc, Los Alamos, NM (US);

Inventors:

Milan Sykora, Los Alamos, NM (US);

Igor Usov, Los Alamos, NM (US);

Assignee:

Los Alamos National Security, LLC, Los Alamos, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/06 (2012.01); H01L 31/032 (2006.01); H01L 31/103 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/032 (2013.01); H01L 31/022408 (2013.01); H01L 31/103 (2013.01); H01L 31/18 (2013.01);
Abstract

Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxides are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.


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