The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Apr. 10, 2014
Applicant:
Hitachi Metals, Ltd., Minato-ku, Tokyo, JP;
Inventors:
Hiroyuki Uchiyama, Yasugi, EP;
Hideko Fukushima, Yasugi, JP;
Assignee:
HITACHI METALS, LTD., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/786 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); C23C 14/08 (2013.01); C23C 14/086 (2013.01); C23C 14/3414 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01);
Abstract
The invention provides an oxide semiconductor target including an oxide sintered body including zinc, tin, oxygen, and aluminum in a content ratio of from 0.005% by mass to 0.2% by mass with respect to the total mass of the oxide sintered body, in which the content ratio of silicon to the total mass of the oxide sintered body is less than 0.03% by mass.
Uchiyama, Hiroyuki. (2017). Oxide semiconductor target, oxide semiconductor film and method for producing same, and thin film transistor (U.S. Patent No. 9837543). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9837543
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile