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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9837542 B1

PDFFull Text
Date of Patent:
Dec. 05, 2017

Filed:

Jul. 17, 2015

Polycrystalline silicon thin-film transistor

Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Zheng Liu, Beijing, CN;

Chunping Long, Beijing, CN;

Yu-Cheng Chan, Beijing, CN;

Xiaoyong Lu, Beijing, CN;

Xialong Li, Beijing, CN;

Assignee:

BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;

Attorney:

Kinney & Lange, P.A.

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78633 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02667 (2013.01); H01L 21/26513 (2013.01); H01L 27/1222 (2013.01); H01L 29/66757 (2013.01); H01L 29/78618 (2013.01); H01L 29/78675 (2013.01); H01L 29/78696 (2013.01);
Abstract

A polycrystalline silicon thin-film transistor includes a substrate; an isolation layer formed on the substrate; and a polycrystalline silicon active layer formed on the substrate and the isolation layer, with two source-drain ion implantation regions being formed at both sides of the active layer, wherein the edges at both ends of the isolation layer are within the edges at both ends of the active layer. In the polycrystalline silicon thin-film transistor and the method for manufacturing the same, it is possible to increase the grain size of the active layer, improve the grain uniformity in a channel region thereof, effectively prevent deterioration of characteristics of the active layer caused by backlight irradiation, and improve the reliability of the device.

Find Patent Forward Citations

Liu, Zheng. (2017). Polycrystalline silicon thin-film transistor (U.S. Patent No. 9837542). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9837542

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