The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

Nov. 10, 2015
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Kenichi Yoshimochi, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7802 (2013.01); H01L 29/0696 (2013.01); H01L 29/0869 (2013.01); H01L 29/1095 (2013.01); H01L 29/41741 (2013.01); H01L 29/4238 (2013.01); H01L 29/456 (2013.01); H01L 29/665 (2013.01); H01L 29/66712 (2013.01); H01L 29/66719 (2013.01); H01L 29/4933 (2013.01);
Abstract

The semiconductor device includes a semiconductor substrate, a plurality of source regions formed in a stripe shape on the semiconductor substrate, a plurality of gate electrodes formed in a stripe shape between a plurality of the stripe shaped source regions on the semiconductor substrate, an insulating film for covering the source regions and the gate electrodes, the insulating film including a contact hole for partly exposing the source regions in a part of a predetermined region with respect to a longitudinal direction of the source regions; and a source electrode formed on the insulating film and electrically connected to the source region via the contact hole.


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