The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Jun. 22, 2016
Applicant:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Inventor:
Yasuhiro Murase, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01); H01L 29/06 (2006.01); H01L 29/205 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7783 (2013.01); H01L 29/0619 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/1066 (2013.01);
Abstract
The semiconductor device has a barrier layer formed on a channel layer, an n type diffusion preventing layer formed on the barrier layer and containing aluminum, and a source electrode and a drain electrode formed on the diffusion preventing layer. The semiconductor device further has a p type cap layer formed on the diffusion preventing layer sandwiched between the source electrode and the drain electrode and a gate electrode formed on the cap layer. The diffusion preventing layer has an aluminum composition ratio greater than the aluminum composition ratio of the barrier layer.