The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

Mar. 18, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Joseph R. Greco, South Burlington, VT (US);

Qizhi Liu, Lexington, MA (US);

Aaron L. Vallett, Jericho, VT (US);

Robert F. Vatter, St. Albans, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/732 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 21/768 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 27/082 (2006.01); H01L 27/06 (2006.01); H01L 29/417 (2006.01); H01L 21/8249 (2006.01);
U.S. Cl.
CPC ...
H01L 29/732 (2013.01); H01L 21/76879 (2013.01); H01L 27/0826 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/16 (2013.01); H01L 29/42304 (2013.01); H01L 29/456 (2013.01); H01L 29/66272 (2013.01); H01L 29/66287 (2013.01); H01L 21/8249 (2013.01); H01L 27/0623 (2013.01); H01L 29/41708 (2013.01); H01L 29/66234 (2013.01);
Abstract

Various particular embodiments include an integrated circuit (IC) structure having: a stack region; and a silicon substrate underlying and contacting the stack region, the silicon substrate including: a silicon region including a doped subcollector region; a set of isolation regions overlying the silicon region; a base region between the set of isolation regions and below the stack region, the base region including an intrinsic base contacting the stack region, an extrinsic base contacting the intrinsic base and the stack region, and an amorphized extrinsic base contact region contacting the extrinsic base; a collector region between the set of isolation regions; an undercut collector-base region between the set of isolation regions and below the base region; and a collector contact region contacting the collector region under the intrinsic base and the collector-base region via the doped subcollector region.


Find Patent Forward Citations

Loading…