The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Nov. 02, 2015
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Abstract
A semiconductor device includes: a channel layer which is made of InAlGaN (0≦p+q≦1, 0≦p, and 0≦q); a barrier layer which is formed on the channel layer and is made of InAlGaN (0≦r+s≦1, 0≦r) having a bandgap larger than that of the channel layer; a diffusion suppression layer which is selectively formed on the barrier layer and is made of InAlGaN (0≦t+u≦1, 0≦t, and s>u); a p-type conductive layer which is formed on the diffusion suppression layer and is made of InAlGaN (0≦x+y≦1, 0≦x, and 0≦y) having p-type conductivity; and a gate electrode which is formed on the p-type conductive layer.