The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Jan. 23, 2017
Hgst, Inc., San Jose, CA (US);
Daniel Robert Shepard, North Hampton, NH (US);
HGST, Inc., San Jose, CA (US);
Abstract
A method for fabricating 3-D cross-point memory arrays, and more particularly to fabricating phase change memory (PCM) and resistive RAM (ReRAM or RRAM) 3-D memory arrays having a cell size footprint of 4F2. The method for forming a plurality of layers of memory cells using a limited number of photolithographic patterning steps is applicable to memory devices having single or multiple storage bits per cell, such as cells having anywhere from one to eight bits per cell or more. These bits are stacked three dimensionally and include memory cells based on phase change material, on resistive change material, on magnetic field alignment, on mechanical switching, and on other memory cells based on other information storage technologies.