The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Dec. 14, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 27/10 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10891 (2013.01); H01L 27/10814 (2013.01); H01L 27/10876 (2013.01);
Abstract
A device isolation region is formed, delimiting an active region in a substrate. A word line is formed, extending across the active region and the device isolation region and buried therein. A bit line is formed crossing the word line on the substrate. A channel is formed adjacent the word line, the channel having a retrograde doping profile having a doping concentration that increases away from a top surface of the active region. Formation of the channel includes performing a field ion implantation in the active region having a projected range near a bottom of the device isolation region.