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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9837395 B1

PDFFull Text
Date of Patent:
Dec. 05, 2017

Filed:

Apr. 12, 2016

Semiconductor device

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Hisashi Toyoda, Tokyo, JP;

Koichi Yamazaki, Tokyo, JP;

Koichi Arai, Ibaraki, JP;

Tatsuhiro Seki, Tokyo, JP;

Assignee:

Renesas Electrics Corporation, Tokyo, JE;

Attorney:

McGinn IP Law Group, PLLC

Primary Examiner:

Telly Green

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 25/18 (2006.01); H03K 17/10 (2006.01); H03K 17/687 (2006.01); H03K 17/74 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H01L 29/10 (2006.01); H02P 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 24/49 (2013.01); H01L 25/072 (2013.01); H01L 29/1095 (2013.01); H02P 27/06 (2013.01); H03K 17/102 (2013.01); H03K 17/6871 (2013.01); H03K 17/74 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/49113 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/1207 (2013.01); H01L 2924/13062 (2013.01); H01L 2924/13091 (2013.01); H03K 2017/6875 (2013.01);
Abstract

A semiconductor device includes a normally-on junction FET having a gate electrode, a source electrode and a drain electrode and a normally-off MOSFET having a gate electrode, a source electrode and a drain electrode. The source electrode of the junction FET is electrically connected to the drain electrode of the MOSFET, and the junction FET is thus connected to the MOSFET in series. The gate electrode of the junction FET is electrically connected to the gate electrode of the MOSFET.

Find Patent Forward Citations

Toyoda, Hisashi. (2017). Semiconductor device (U.S. Patent No. 9837395). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9837395

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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