The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Dec. 02, 2016
Applicant:
Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;
Inventors:
Jongchan Lee, Yongin-si, KR;
Yoonho Khang, Yongin-si, KR;
Myounghwa Kim, Yongin-si, KR;
Joonhwa Bae, Yongin-si, KR;
Myounggeun Cha, Yongin-si, KR;
Assignee:
SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/77 (2017.01); H01L 21/8234 (2006.01); H01L 21/285 (2006.01); H01L 29/786 (2006.01); H01L 29/45 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 21/3205 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823418 (2013.01); H01L 21/02422 (2013.01); H01L 21/02488 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02667 (2013.01); H01L 21/02672 (2013.01); H01L 21/28518 (2013.01); H01L 21/32053 (2013.01); H01L 27/1222 (2013.01); H01L 27/1274 (2013.01); H01L 27/1277 (2013.01); H01L 29/41733 (2013.01); H01L 29/458 (2013.01); H01L 29/66765 (2013.01); H01L 29/78618 (2013.01); H01L 29/78678 (2013.01); H01L 27/3262 (2013.01);
Abstract
A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.