The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

Mar. 06, 2015
Applicants:

Changkyu Seol, Osan-si, KR;

Junjin Kong, Yongin-si, KR;

Jongha Kim, Seongnam-si, KR;

Hyejeong SO, Seoul, KR;

Hong Rak Son, Anyang-si, KR;

Seonghyeog Choi, Hwaseong-si, KR;

Inventors:

Changkyu Seol, Osan-si, KR;

Junjin Kong, Yongin-si, KR;

JongHa Kim, Seongnam-si, KR;

Hyejeong So, Seoul, KR;

Hong Rak Son, Anyang-si, KR;

Seonghyeog Choi, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 16/10 (2006.01); G11C 7/10 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 7/1006 (2013.01); G11C 11/5628 (2013.01); G11C 16/102 (2013.01);
Abstract

The operating method of the storage device includes receiving write data to be written at the plurality of memory cells; determining whether the received write data is LSB data to be written at the plurality of memory cells; and encoding the write data according to the determination. The write data is encoded according to the write data when the write data is LSB data to be written at the plurality of memory cells. The write data is encoded according to the write data and encoding data of lower data of the write data to be written at the plurality of memory cells when the write data is not LSB data to be written at the plurality of memory cells.


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