The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

Jun. 11, 2015
Applicants:

Yoon Kim, Yongin-si, KR;

Kyehyun Kyung, Yongin-si, KR;

Kyungryun Kim, Seoul, KR;

Sangyong Yoon, Seoul, KR;

Inventors:

Yoon Kim, Yongin-si, KR;

Kyehyun Kyung, Yongin-si, KR;

Kyungryun Kim, Seoul, KR;

Sangyong Yoon, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 29/52 (2006.01); G06F 3/06 (2006.01); G11C 16/32 (2006.01); G11C 29/02 (2006.01); G06F 11/10 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G06F 3/061 (2013.01); G06F 3/0619 (2013.01); G06F 3/0653 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 11/1048 (2013.01); G11C 16/26 (2013.01); G11C 16/32 (2013.01); G11C 29/021 (2013.01); G11C 29/023 (2013.01); G11C 29/028 (2013.01); G11C 29/52 (2013.01); G11C 16/0483 (2013.01);
Abstract

A read method of a storage device includes performing a first read operation on a nonvolatile memory device based on a time stamp table storing a program time and a time-read level look-up table indicating a read level shift due to a program lapsed time. A determination is made whether to adjust the time-read level look-up table based on a result of the first read operation. As a consequence of determining to adjust the time-read level look-up table, adjusting the time-read level look-up table through a valley search operation and performing a second read operation on the nonvolatile memory device based on the time stamp table and the adjusted time-read level look-up table.


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