The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Sep. 15, 2014
Lockheed Martin Corporation, Bethesda, MD (US);
Andrew Xing, Bothell, WA (US);
Eric C. Honea, Seattle, WA (US);
Lockheed Martin Corporation, Bethesda, MD (US);
Abstract
The present invention provides a method and apparatus for fabricating a grating on a silicon substrate, and the resulting grating device. In some embodiments, the apparatus method includes providing a silicon substrate; growing a diamond layer on the substrate; removing most of the silicon substrate and polishing an obverse face of the silicon to leave a very thin layer of polished silicon on the diamond layer; depositing a stack on the diamond layer, wherein the stack includes a plurality of pairs of dielectric layers on the thin layer of polished silicon, wherein each pair of the plurality of pairs of dielectric layers includes a first layer having a first index of refraction value and a second layer having a second index of refraction value that is different than the first index of refraction value; and forming a diffraction grating on an outer surface of the stack.