The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

Jul. 15, 2015
Applicants:

Tsinghua University, Beijing, CN;

Nuctech Company Limited, Beijing, CN;

Inventors:

Lan Zhang, Beijing, CN;

Yulan Li, Beijing, CN;

Yuanjing Li, Beijing, CN;

Jianqiang Fu, Beijing, CN;

Yingshuai Du, Beijing, CN;

Wei Zhang, Beijing, CN;

Xuming Ma, Beijing, CN;

Jun Li, Beijing, CN;

Assignees:

TSINGHUA UNIVERSITY, Beijing, CN;

NUCTECH COMPANY LIMITED, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01); H04N 5/32 (2006.01);
U.S. Cl.
CPC ...
G01T 1/247 (2013.01); G01T 1/241 (2013.01); H04N 5/32 (2013.01);
Abstract

The present invention provides a method and apparatus for processing signals of a semiconductor detector, including: acquiring a relationship of a time difference between anode and cathode signals of the semiconductor detector with an anode signal amplitude; obtaining an optimal data screening interval according to the relationship of the time difference between anode and cathode signals of the semiconductor detector with the anode signal amplitude, wherein the optimal data screening interval is an interval where the time difference between the anode and cathode signals is greater than 50 ns; and screening and processing the collected data according to the optimal data screening interval when the semiconductor detector collects data. The present invention better overcomes the inherent crystal defects of the detector, reduces the effect of background noise, increases the energy resolution of the cadmium zinc telluride detector under room temperature, and improves the peak-to-compton ratio.


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