The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

Mar. 10, 2015
Applicant:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Inventors:

Yosuke Osanai, Toyota, JP;

Ayuki Koishi, Kani, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); G01R 31/40 (2014.01); H02M 1/08 (2006.01); H02M 7/538 (2007.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
G01R 31/40 (2013.01); H02M 1/08 (2013.01); H02M 7/538 (2013.01); H02M 2001/0009 (2013.01); H02M 2001/0012 (2013.01); H02M 2001/0048 (2013.01); Y02B 70/1491 (2013.01);
Abstract

A semiconductor device includes a transistor, a diode, a first detection circuit, a second detection circuit, a calculation circuit, and a determination circuit. The diode is connected in reverse parallel with the transistor. The first detection circuit is configured to detect a change rate of a gate voltage of the transistor with respect to time. The second detection circuit is configured to detect a gate current of the transistor. The calculation circuit is configured to calculate a gate capacitance based on the change rate of the gate voltage with respect to time, and the gate current. The determination circuit is configured to determine, based on a determination result of the gate capacitance when a charge is injected to a gate of the transistor, whether a current flows to the diode or to the transistor.


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