The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

Jun. 21, 2012
Applicants:

Kentaro Sogabe, Tokyo, JP;

Makoto Ozawa, Tokyo, JP;

Inventors:

Kentaro Sogabe, Tokyo, JP;

Makoto Ozawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/08 (2006.01); C23C 14/34 (2006.01); C04B 35/453 (2006.01);
U.S. Cl.
CPC ...
C23C 14/086 (2013.01); C04B 35/453 (2013.01); C23C 14/3414 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3256 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/3294 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/604 (2013.01); C04B 2235/6585 (2013.01); C04B 2235/763 (2013.01); C04B 2235/786 (2013.01); C04B 2235/787 (2013.01); C04B 2235/96 (2013.01);
Abstract

[Object] Provided are a Zn—Sn—O-based oxide sintered body which is used as a sputtering target or a tablet for vapor deposition and which is resistant to crack formation and the like during film formation, and a method for producing the same. [Solving means] The oxide sintered body is characterized in that tin is contained with an atomic ratio of Sn/(Zn+Sn) being 0.01 to 0.6, an average crystal particle diameter of the sintered body is 4.5 μm or less, and a degree of orientation represented by I/[I+I] is 0.52 or more, where Iand Irepresent integrated intensities of the (222) plane and the (400) plane of a ZnSnOphase measured by X-ray diffraction using the CuKα radiation. The oxide sintered body has an improved mechanical strength, so that the oxide sintered body is resistant to breakage during processing of the sintered body and also is resistant to breakage and crack formation during film formation of transparent conductive films when used as a sputtering target or a tablet for vapor deposition.


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