The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

Jul. 31, 2015
Applicant:

Csmc Technologies Fab1 Co., Ltd., Jiangsu, CN;

Inventor:

Errong Jing, Jiangsu, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00182 (2013.01); B81B 3/0021 (2013.01); B81B 2203/0118 (2013.01); B81B 2203/0315 (2013.01); B81B 2203/04 (2013.01); B81C 2201/0109 (2013.01); B81C 2201/0111 (2013.01);
Abstract

A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate, wherein the substrate comprises a first silicon layer, a buried oxide layer and a second silicon layer that are laminated sequentially; patterning the first silicon layer and exposing the buried oxide layer to form a rectangular upper electrode plate separated from a peripheral region, wherein the upper electrode plate and the peripheral region are connected by only using a cantilever beam, and forming, on the peripheral region, a recessed portion exposing the buried oxide layer; patterning the second silicon layer and exposing the buried oxide layer to form a back cavity, wherein the back cavity is located in a region of the second silicon layer corresponding to the upper electrode plate, covers 40% to 60% of the area of the region corresponding to the upper electrode plate, and is close to one end of the cantilever beam; exposing the second silicon layer, and suspending the upper electrode plate and the cantilever beam; and respectively forming an upper contact electrode and a lower contact electrode on the second silicon layer.


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