The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

Nov. 30, 2015
Applicant:

Microcosm Technology Co, Ltd., Tainan, TW;

Inventors:

Tang-Chieh Huang, Tainan, TW;

Sih-Ci Jheng, Tainan, TW;

Chin-Te Yen, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 15/04 (2006.01); B32B 7/12 (2006.01); B32B 37/06 (2006.01); B32B 37/24 (2006.01); B32B 38/00 (2006.01); H05K 1/03 (2006.01); H05K 3/00 (2006.01); H05K 3/30 (2006.01); H05K 1/02 (2006.01); H01B 3/30 (2006.01); B32B 37/02 (2006.01); B32B 7/04 (2006.01); B32B 15/08 (2006.01); B32B 27/28 (2006.01); C08J 5/12 (2006.01); H05K 3/02 (2006.01); B32B 37/00 (2006.01);
U.S. Cl.
CPC ...
B32B 15/043 (2013.01); B32B 7/04 (2013.01); B32B 7/12 (2013.01); B32B 15/08 (2013.01); B32B 27/281 (2013.01); B32B 37/02 (2013.01); B32B 37/06 (2013.01); B32B 37/24 (2013.01); H01B 3/306 (2013.01); H05K 1/0346 (2013.01); B32B 2037/0092 (2013.01); B32B 2037/243 (2013.01); B32B 2255/06 (2013.01); B32B 2255/26 (2013.01); B32B 2307/202 (2013.01); B32B 2307/206 (2013.01); B32B 2307/306 (2013.01); B32B 2307/412 (2013.01); B32B 2307/414 (2013.01); B32B 2307/50 (2013.01); B32B 2307/704 (2013.01); B32B 2307/732 (2013.01); B32B 2307/734 (2013.01); B32B 2311/00 (2013.01); B32B 2311/12 (2013.01); B32B 2379/08 (2013.01); B32B 2457/00 (2013.01); B32B 2457/08 (2013.01); C08J 2379/08 (2013.01); H05K 1/024 (2013.01); H05K 3/022 (2013.01); H05K 2201/0154 (2013.01);
Abstract

A metal laminate comprising a metal layer and an insulating layer is provided. The insulating layer is disposed on the metal layer and directly contacts the metal layer. The insulating layer is made of a polyimide resin, and the polyimide resin is derived from at least two dianhydrides and at least two diamines. The dianhydride monomers are selected from the group consisting of p-phenylenebis (trimellitate anhydride), 4,4'-(hexafluoroisopropylidene)-diphthalic anhydride, 4,4′-(4,4′-isopropylidenediphenoxy)bis(phthalic anhydride) and the combination thereof. One of the diamine monomers is 2,2′-bis(trifluoromethyl)benzidine, and the other diamine monomers are selected from the group consisting of 2,2-bis[4-(4-aminophenoxy)phenyl, 1,3-bis(4-aminophenoxy)benzene, p-phenylenediamine, 4,4′-oxydianiline, 4,4′-methylenedianiline, 4,4′-diaminobenzanilide, 4,4′-diaminodiphenyl-sulfone, m-tolidine, 2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane and the combination thereof. A molar ratio of the dianhydride monomers to the diamine monomers is between 0.85 and 1.15.


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