The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Apr. 05, 2013
Abb Schweiz Ag, Baden, CH;
Annika Lokrantz, Ludvika, SE;
Kristoffer Nilsson, Ludvika, SE;
Ying Jiang-Häfner, Ludvika, SE;
Christer Sjöberg, Ludvika, SE;
Lars Döfnäs, Ludvika, SE;
Wim Van-Der-Merwe, Baden-Dättwil, CH;
ABB SCHWEIZ AG, Baden, CH;
Abstract
A method for controlling a first and a second reverse-conducting insulated gate bipolar transistor (RC-IGBT), electrically connected in series, is disclosed. A collector of the first RC-IGBT is electrically connected to a positive pole of a direct current voltage source, and an emitter of the second RC-IGBT is electrically connected to a negative pole of the DC voltage source. Further, an emitter of the first RC-IGBT is electrically connected to a collector of the second RC-IGBT to form an alternating current terminal. A gate voltage is applied to respective gates of the first and second RC-IGBTs, wherein the gate voltage is controlled based on a magnitude and a direction of an output current on the AC terminal and on a command signal alternating between a first and a second value.