The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

May. 02, 2017
Applicant:

Short Circuit Technologies Llc, Rochester, NY (US);

Inventors:

Masoud Babaie, Pijnacker, NL;

Robert Bogdan Staszewski, Dublin, IE;

Assignee:

Short Circuit Technologies LLC, Rochester, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03H 7/38 (2006.01); H01F 27/28 (2006.01); H03F 1/02 (2006.01); H03F 1/56 (2006.01); H03F 3/193 (2006.01); H03F 3/21 (2006.01); H03F 3/217 (2006.01); H01F 27/29 (2006.01); H01Q 1/50 (2006.01); H03H 7/40 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03H 7/38 (2013.01); H01F 27/2823 (2013.01); H01F 27/29 (2013.01); H01Q 1/50 (2013.01); H03F 1/0205 (2013.01); H03F 1/565 (2013.01); H03F 3/193 (2013.01); H03F 3/211 (2013.01); H03F 3/2171 (2013.01); H03F 3/2176 (2013.01); H03F 3/245 (2013.01); H03H 7/40 (2013.01); H03F 2200/318 (2013.01); H03F 2200/451 (2013.01); H03F 2200/534 (2013.01); H03F 2200/537 (2013.01); H03F 2200/541 (2013.01); H03F 2203/21106 (2013.01); H03F 2203/21139 (2013.01);
Abstract

A novel and useful transmitter (TX) architecture for ultra-low power (ULP) radios. An all-digital PLL employs a digitally controlled oscillator (DCO) having switching current sources to reduce supply voltage and power consumption without sacrificing phase noise and startup margins. It also reduces 1/f noise allowing the ADPLL after settling to reduce its sampling rate or shut it off entirely during direct DCO data modulation. A switching power amplifier integrates its matching network while operating in class-E/Fto maximally enhance its efficiency. The transmitter has been realized in 28 nm CMOS and satisfies all metal density and other manufacturing rules. It consumes 3.6 mW/5.5 mW while delivering 0 dBm/3 dBm RF power in Bluetooth Low-Energy.


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