The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Dec. 28, 2013
Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh, IN;
Baquer Mazhari, Kanpur, IN;
Arjit Ashok, Kanpur, IN;
INDIAN INSTITUTE OF TECHNOLOGY KANPUR, Kanpur, Uttar Pradesh, IN;
Abstract
Technologies are generally described for a four-terminal, gate-controlled, thin-film thyristor device. The thyristor device may essentially be an n-type thin-film transistor (TFT) with an additional emitter terminal. The thyristor device may exhibit an S-shaped negative differential resistance (NDR) characteristic resulting from conductance modulation. The conductance modulation may be caused by formation of a secondary channel for current flow due to an inherent structure of the device. The secondary channel may be formed in a semiconductor area within the device, the semiconductor area including a hole transporting organic semiconductor layer (HTL) and an electron transporting organic semiconductor layer (ETL). A gate terminal of the thyristor device may further allow onset of NDR characteristics to be controlled and may allow the device to be switched off.